IIRFP3703 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

IIRFP3703

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFP3703，IIRFP3703

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤2.8mΩ

·Enhancement mode:

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Synchronous Rectification

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

30

VGS

Gate-Source Voltage

±20

ID

Drain Current-Continuous

210

IDM

Drain Current-Single Pulsed

1000

PD

Total Dissipation @TC=25℃

230

Tj

Max. Operating Junction Temperature

150

Tstg

Storage Temperature

-55~150

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-c) Channel-to-case thermal resistance

Rth(j-a) Channel-to-ambient thermal resistance

MAX

0.65

40

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

Share Link: