BSP16 데이터 시트보기 (PDF) - Philips Electronics
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BSP16 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistor
Product specification
BSP16
FEATURES
• High voltage (max. 350 V).
APPLICATIONS
• Switching and amplification
• Especially used in telephony and automotive
applications.
DESCRIPTION
PNP high-voltage transistor in a SOT223 plastic package.
NPN complements: BSP19 and BSP20.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−350
−300
−6
−200
−200
1.28
+150
150
+150
UNIT
V
V
V
mA
mA
W
°C
°C
°C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 28
2
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