2SD882 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD882

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=2.0A ;IB=0.2A

ICBO

Collector cut-off current

VCB=30V; IE=0

IEBO

Emitter cut-off current

VEB=3V; IC=0

hFE-1

DC current gain

IC=20mA ; VCE=2V

hFE-2

DC current gain

IC=1A ; VCE=2V

fT

Transition frequency

IC=0.1A ; VCE=5V

COB

Collector output capacitance

f=1MHz ; VCB=10V

hFE-2 Classifications

R

Q

P

E

60-120 100-200 160-320 200-400

Product Specification

2SD882

MIN TYP. MAX UNIT

30

V

0.5

V

2.0

V

1

µA

1

µA

30

60

400

90

MHz

45

pF

2

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