BTS115A 데이터 시트보기 (PDF) - Siemens AG

부품명

상세내역

제조사

BTS115A

TEMPFET®

Siemens AG 

Drain-source on-state resistance

RDS(on) = f (Tj)

Parameter: ID = 7.8 A, VGS = 4.5 V

BTS 115A

Gate threshold voltage VGS(th) = f (Tj)

Parameter: VDS = VGS, ID = – 1 mA

Typ. transfer characteristic

ID = f (VGS)

Parameter: tp = 80 µs, VDS = – 25 V

Typ. transconductance gfs = f (ID)

Parameter: tp = 80 µs, VDS = – 25 V

Semiconductor Group

6

Share Link: