NCP1612B 데이터 시트보기 (PDF) - ON Semiconductor
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NCP1612B Datasheet PDF : 31 Pages
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NCP1612A, NCP1612B, NCP1612A1, NCP1612A2, NCP1612A3, NCP1612B2
TYPICAL CHARACTERISTICS
250
98
225
200
175
150
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. Error Amplifier Transconductance
Gain vs. Temperature
0.5
0.4
0.3
0.2
0.1
0
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 25. Ratio (VOUT Low Detect Hysteresis /
VREF) vs. Temperature
520
515
510
505
500
495
490
485
480
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 27. Current Sense Voltage Threshold
vs. Temperature
97
96
95
94
93
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 24. Ratio (VOUT Low Detect Threshold /
VREF) vs. Temperature
280
260
240
220
200
180
160
140
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 26. VCONTROL Source Current when
(VOUT Low Detect) is Activated for Dynamic
Response Enhancer (DRE) vs. Temperature
280
260
240
220
200
180
160
140
120
−50 −30 −10 10 30 50 70 90 110 130
TJ, JUNCTION TEMPERATURE (°C)
Figure 28. Over-current Protection Leading
Edge Blanking vs. Temperature
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