BYS11-90(2000) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BYS11-90 Datasheet PDF : 4 Pages
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Schottky Barrier Rectifier
Features
D High efficiency
D Low power losses
D Very low switching losses
D Low reverse current
D High surge capability
Applications
Polarity protection
Low voltage, high frequency rectifiers
BYS11–90
Vishay Semiconductors
15 811
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
tp=10ms, half sinewave
Junction and storage
temperature range
Type
Symbol Value
Unit
VR=
VRRM
90
V
IFSM
30
A
IFAV
1.5
A
Tj=Tstg –55...+150 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction lead
Junction ambient
TL=constant
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol Value Unit
RthJL
25
150
K/W
RthJA
125
100
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
Reverse current
IF=1A
VR=VRRM
VR=VRRM, Tj=100°C
Type
Symbol Min Typ Max Unit
VF
750 mV
100 mA
IR
1 mA
Document Number 86014
Rev. 3, 08-Sep-00
www.vishay.com
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