2PA1774S 데이터 시트보기 (PDF) - Philips Electronics
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2PA1774S Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Preliminary specification
2PA1774
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PA1774Q
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
IC = 0; VEB = −4 V
−
IC = −1 mA; VCE = −6 V; note 1
120
2PA1774R
180
2PA1774S
270
collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1
−
collector capacitance
IE = ie = 0; VCB = −12 V; f = 1 MHz
−
transition frequency
IE = −2 mA; VCE = −12 V; f = 100 MHz; 100
note 1
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
−100
−5
−100
UNIT
nA
µA
nA
270
390
560
−200
2.2
−
mV
pF
MHz
1999 Jun 01
3
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