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CP10C60 데이터 시트보기 (PDF) - Apollo Electron Co., Ltd.
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CP10C60
Standard Gate Silicon Controlled Rectifiers
Apollo Electron Co., Ltd.
CP10C60 Datasheet PDF : 5 Pages
1
2
3
4
5
CP10C60
Electrical Characteristics
( T
j
= 25 °C unless otherwise noted )
Symbol
Items
Conditions
I
DRM
V
TM
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
V
D
= V
DRM
I
T
=
1
2 A
I
GT
Gate Trigger Current (2)
VD = 12 V, RL=100 Ω
Ratings
Unit
Min. Typ. Max.
─
--
2
mA
─
─
1.
7
V
─
─
20
mA
V
GT
Gate Trigger Voltage (2)
V
D
= 12 V, R
L
=100Ω
---
---
1.
3
V
dv/dt
Critical Rate of Rise Off-State
Linear slope upto
V
D
=V
DRM
67%
,
Voltage
Gate open
T
j
=110°C
20
─
─
V/us
I
H
Holding Current
V
D
=24V, I
GT
=50mA
---
---
30
mA
2/5
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