BDX63 데이터 시트보기 (PDF) - Comset Semiconductors

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BDX63

NPN SILICON DARLINGTONS

Comset Semiconductors 

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX63

BDX63A

BDX63B

BDX63C

Value

1.94

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=0.1 A, IB=0, L=25mH

ICEO

IEBO

ICBO

VCE(SAT)

Collector Cutoff Current

Emitter Cutoff Current

VCE=30 V

VCE=40 V

VCE=50 V

VCE=60 V

VBE=5 V

Collector-Base Cutoff

Current

VCBO=60 V

VCBO=400 V

TCASE=200°C

VCBO=80 V

VCBO=50 V

TCASE=200°C

VCBO=100 V

VCBO=60 V

TCASE=200°C

VCBO=120 V

VCBO=70 V

TCASE=200°

Collector-Emitter saturation

Voltage (*)

IC=3.0 A, IB=12 mA

VF

Forward Voltage (pulse

method)

IF=3 A

BDX63 60 - -

BDX63A 80 -

BDX63B 100 -

-

-

V

BDX63C 120 - -

BDX63

-

BDX63A -

BDX63B -

BDX63C -

BDX63

BDX63A

BDX63B

-

BDX63C

-

BDX63

-

-

BDX63A -

-

BDX63B -

-

BDX63C -

-

-

-

0.5 mA

-

- 5.0 mA

- 0.2

-2

- 0.2

-2

- 0.2

-

-2

- 0.2

-

2

BDX63

BDX63A

BDX63B

-

-

2

V

BDX63C

BDX63

BDX63A

BDX63B

-

1.2

-

V

BDX63C

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