IRKH500-12 데이터 시트보기 (PDF) - International Rectifier

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IRKH500-12

SUPER MAGN-A-pak™ Power Modules

International Rectifier 

IRK.500.. Series

Bulletin I27401 rev. A 09/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

Voltage

Code

VRRM/VDRM, maximum repetitive

peak reverse voltage

V

08

800

12

IRK.500..

14

1200

1400

16

1600

VRSM , maximum non-

repetitive peak rev. voltage

V

900

1300

1500

1700

IRRM/IDRM max.

@ T = T max.

J

J

mA

100

On-state Conduction

Parameter

I

T(AV)

IF(AV)

IT(RMS)

ITSM

IFSM

Maximum average on-state current

@ Case temperature

Maximum RMS on-state current

Maximum peak, one-cycle,

non-repetitive surge current

I2t

Maximum I2t for fusing

I2√t Maximum I2√t for fusing

VT(TO)1 Low level value of threshold voltage

VT(TO)2 High level value of threshold voltage

rt1

Low level value of on-state slope resistance

rt2

High level value of on-state slope resistance

VTM Maximum on-state or forward

V

voltage drop

FM

IH

Maximum holding current

IL

Typical latching current

IRK.500..

500

82

785

17.8

18.7

15.0

15.7

1591

1452

1125

1027

15910

0.85

0.93

0.36

0.32

1.50

500

1000

Units Conditions

A 180° conduction, half sine wave

°C

A 180° conduction, half sine wave @ TC = 82°C

KA t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% VRRM

t = 8.3ms reapplied Sinusoidal half wave,

KA2s t = 10ms No voltage Initial T = T max.

JJ

t = 8.3ms reapplied

t = 10ms 100% VRRM

t = 8.3ms reapplied

KA2√s t = 0.1 to 10ms, no voltage reapplied

V

(16.7%

x

π

x

I

T(AV)

<

I

<

π

x

I ),

T(AV)

T

J

=

T

J

max.

(I

>

π

x

IT(AV)),

T

J

=

T

J

max.

mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

(I > π x IT(AV)), TJ = TJ max.

V Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse

mA TJ = 25°C, anode supply 12V resistive load

Switching

Parameter

di/dt Maximum rate of rise of turned-on

current

td

Typical delay time

tq

Typical turn-off time

2

IRK.500..

1000

Units Conditions

A/µs TJ = TJ max., ITM = 400A, VDRM applied

2.0

µs Gate current 1A, dig/dt = 1A/µs

Vd = 0.67% VDRM , TJ = 25°C

200

µs ITM = 750A, TJ = TJ max, di/dt = -60A/µs,

V

R

=

50V,

dv/dt

=

20V/µs,

Gate

0

V

100Ω

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