BF998 데이터 시트보기 (PDF) - Siemens AG

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BF998

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 998

Total power dissipation Ptot = f (TA)

Output characteristics ID = f (VDS)

VG2S = 4 V

Gate 1 forward transconductance

gfs1 = f (VG1S)

VDS = 8 V, IDSS = 10 mA, f = 1 kHz

Gate 1 forward transconductance

gfs1 = f (VG2S)

VDS = 8 V, IDSS = 10 mA, f = 1 kHz

Semiconductor Group

4

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