BAV756DW 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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BAV756DW

Surface Mount Fast Switching Diodes

Shenzhen Luguang Electronic Technology Co., Ltd 

BAV756DW

Surface Mount Fast Switching Diodes

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

UNIT

Reverse breakdown voltage

V(BR)R

IR=2.5μA

75

Reverse voltage leakage current IR

Forward voltage

VF

Junction Capacitance

CJ

Reverse Recovery time

trr

VR=75V

VR=75V,Tj=150℃

VR=25V,Tj=150℃

VR=20V

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

VR=0V,f=1.0MHz

IF=IR=10mA,Irr=0.1*IR,

RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

V

2.5

μA

50

μA

30

μA

25

nA

0.715

0.855

V

1.0

1.25

2.0

pF

4.0

ns

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mail:lge@luguang.cn

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