BD791 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

BD791

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD791

DESCRIPTION

·High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 100 Vdc (Min)

• High DC Current Gain @ IC = 200 mAdc

hFE = 40–250

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc

•

APPLICATIONS

·Designed for low power audio amplifier and low current,

high-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

8

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1

A

15

W

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance,Junction to Case

8.34 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

Share Link: