Philips Semiconductors
UHF power MOS transistor
Product specification
BLF544
4
handbook, halfpage
T.C
(mV/K)
2
0
−2
MDA504
6
handbook, halfpage
ID
(A)
4
2
MDA505
−4
10−2
10−1
1
ID (A) 10
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
0
0
5
10
15
20
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage; typical values.
handbook, h2alfpage
RDSon
(Ω)
1.6
1.2
0.8
0.4
0
0
50
MDA506
100 Tj (°C) 150
ID = 1.2 A; VGS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
2003 Sep 18
100
handbook, halfpage
C
(pF)
80
60
40
20
0
0
10
MDA507
Cis
Cos
20
30
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
5