BC857S 데이터 시트보기 (PDF) - Fairchild Semiconductor

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BC857S

PNP Multi-Chip General Purpose Amplifier

Fairchild Semiconductor 

BC857S

E2

B2

C1

SC70-6

Mark: 3C

C2

B1

pin #1 E1

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

PNP Multi-Chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector

currents to 200 mA. Sourced from Process 68.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCEO

VCES

VCBO

VEBO

IC

TJ, Tstg

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

45

V

50

V

4

50

V

5.0

V

200

mA

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

Max

BC857S

300

2.4

415

Units

mW

mW/°C

°C/W

1998 Fairchild Semiconductor Corporation

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