ZVN4525E6 데이터 시트보기 (PDF) - Diodes Incorporated.
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ZVN4525E6 Datasheet PDF : 7 Pages
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ZVN4525E6
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
250
285
IDSS
-
35
Gate-Body Leakage
ON CHARACTERISTICS
IGSS
±1
Gate-Source Threshold Voltage
VGS(th)
0.8
1.4
5.6
Static Drain-Source On-State Resistance (Note 7)
RDS (ON)
-
5.9
6.4
Forward Transconductance (Note 9)
gfs
0.3
0.475
Diode Forward Voltage (Note 7)
VSD
DYNAMIC CHARACTERISTICS (Notes 8 & 9)
Input Capacitance
Ciss
-
72
Output Capacitance
Coss
-
11
Reverse Transfer Capacitance
Crss
-
3.6
Total Gate Charge
Qg
-
2.6
Gate-Source Charge
Qgs
-
0.2
Gate-Drain Charge
Qgd
-
0.5
Reverse Recovery Time (Note 9)
trr
-
186
Reverse Recovery Charge (Note 9)
Qrr
-
34
Turn-On Delay Time
td(on)
-
1.25
Turn-On Rise Time
tr
-
1.7
Turn-Off Delay Time
td(off)
-
11.40
Turn-Off Fall Time
tf
-
3.5
Notes:
7. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
Max
-
500
100
1.8
8.5
9.0
9.5
-
0.97
-
-
-
3.65
0.28
0.7
260
48
-
-
-
-
Unit
Test Condition
V ID = 1mA, VGS = 0V
νA VDS = 250V, VGS = 0V
nA VGS = ±40V, VDS = 0V
V
ID = 1mA, VDS = VGS
Ω VGS = 10V, ID = 500mA
Ω VGS = 4.5V, ID = 360mA
Ω
VGS = 2.4V, ID = 20mA
S VDS = 10V, ID = 0.3A
V TJ=+25°C , IS = 360mA, VGS = 0V
pF
pF
VDS = 25 V, VGS = 0V
f = 1MHz
pF
nC
nC VGS = 10V, VDS = 25V
nC ID = 360mA(refer to test circuit)
ns TJ=+25°C, IF=360A,
nC di/dt= 100A/µs
ns
ns VDD = 30V, VGS = 10V
ns
ID = 360mA, RG = 50Ω
(refer to test circuit)
ns
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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