ZXTD09N50DE6(2001) 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZXTD09N50DE6
(Rev.:2001)

SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Diodes Incorporated. 

ZXTD09N50DE6

TYPICAL CHARACTERISTICS

0.4

+25°C

0.3

0.2

IC/IB=10

IC/IB=50

IC/IB=100

0.1

0

1m

10m

100m

1

10

IC - Collector Current (A)

VCE(sat) v IC

0.4

IC/IB=50

0.3

0.2

0.1

-55°C

+25°C

+100°C

+150°C

0

1m

10m

100m

1

10

IC - Collector Current (A)

VCE(sat) v IC

800

VCE=2V

600

+100°C

400

+25°C

200

-55°C

0

1m

10m

100m

1

10

IC - Collector Current (A)

hFE v IC

1.15

0.9

0.6

0.3

0

1m

-55°C

+25°C

+100°C

+150°C

10m

100m

1

10

IC - Collector Current (A)

VBE(on) v IC

1.0

IC/IB=50

0.8

0.6

0.4

-55°C

+25°C

+100°C

0.2

+150°C

0

1m

10m

100m

1

10

IC - Collector Current (A)

VBE(sat) v IC

10

1

100m

DC

1s

100ms

10ms

1ms

100µs

10m

100m

1

10

100

VCE - Collector Emitter Voltage (V)

Safe Operating Area

ISSUE 2 - JUNE 2001

4

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