BCW69 데이터 시트보기 (PDF) - Yea Shin Technology Co., Ltd
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BCW69 Datasheet PDF : 7 Pages
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DATA SHEET
SEMICONDUCTOR
General Purpose Transistors
PNP Silicon
BCW70
H
Featrues
Pb-Free Package is Available.
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
– 45
– 5.0
– 100
Unit
Vdc
Vdc
mAdc
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
3
12
3
COLLECTOR
1
BASE
2
EMITTER
DEVICE MARKING
BCW69 = H1; BCW70= H2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 )
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Collector Cutoff Current
(VCE = –20 Vdc, I E = 0 )
(VCE = –20 Vdc, I E = 0 , TA = 100°C)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CEO
Min
Max
Unit
– 45
—
Vdc
– 50
—
Vdc
– 5.0
—
Vdc
—
– 100
nAdc
—
– 10
µAdc
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