2SB1322A 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SB1322A

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SB1322A TRANSISTOR (PNP)

FEATURES

z Allowing Supply with The Radial Taping

TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-60

-50

-5

-1

625

200

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC= -0.01mA,IE=0

-60

V

V(BR)CEO IC=-2mA,IB=0

-50

V

V(BR)EBO IE=-0.01mA,IC=0

-5

V

ICBO

VCB=-20V,IE=0

-0.1

μA

IEBO

VEB=-5V,IC=0

-0.1

μA

hFE(1)

VCE=-10V, IC=-0.5A

85

340

hFE(2)

VCE=-5V, IC=-1A

50

VCE(sat) IC=-0.5A,IB=-0.05A

-0.4

V

VBE (sat) IC=-0.5A,IB=-0.05A

-1.2

V

Cob

VCB=-10V,IE=0, f=1MHz

30

pF

fT

VCE=-10V,IC= -0.05A, f=200MHz

200

MHz

CLASSIFICATION OF hFE(1)

RANK

Q

RANGE

85-170

R

120-240

S

170-340

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