2SD1306 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SD1306

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD1306

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

15

V

5

V

0.7

A

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 30

—

voltage

Collector to emitter breakdown V(BR)CEO 15

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE*1

250 —

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

250

Notes: 1. The 2SD1306 is grouped by hFE as follows.

2. Pulse test

Grade

D

E

Mark

ND

NE

hFE

250 to 500 400 to 800

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

1.0 µA

800

1.0 V

0.5 V

VCB = 20 V, IE = 0

VCE = 1 V, IC = 150 mA*2

VCE = 1 V, IC = 150 mA*2

IC = 500 mA, IB = 50 mA*2

—

MHz VCE = 1 V, IC = 150 mA*2

See characteristic curves of 2SD1504.

2

Share Link: