2SA656 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
2SA656 Datasheet PDF : 2 Pages
| |||
U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA656
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-110V(Min.)
• Complement to Type 2SC519
APPLICATIONS
• Power amplifier applications.
• Power switching applications.
• DC-DC converter applications.
• Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-7
A
IB
Base Current
Collector Power Dissipation
PC
@TC=25°C
T,
Junction Temperature
-2
A
50
W
150
'C
Tstg
Storage Temperature
-65-150 'C
PIN 1.BASE
2.ailTTER
3. COLLECT OR (CAS^
TO-3 package
[*• —
r
[
i1c
t-E
I
1
-WU-D
V-
f-L-»
/ \ '^ ""* ~"\s
t
>
B
t
•^"x
1
^^
1
1^]
nun
DIM WIN MAX
A
3300
B 25.30 26.67
C
7.80 8. SCI
D 0.90 1.10
£
MG 1 60
<3
1092
H
546
K 1130 1350
L 16.75 17.05
N 19.40 1962
Q
400 420
U ».oo 3020
V
430 4 50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notiee. Information furnished by N.I Semi-Conduetors is helieved to be both accurate and reliable at the time of going
to press. I louever, N.I Semi-Coiicluctors assumes no responsibility for any errors or omissions discovered in its use "
NJ Semi-Conductors encourages customers to verify that datasheets are current before placina orders.
Quality Semi-Conductors
Share Link: 