FW231
RDS(on) - Ta
40
35
30
25
20
I DI D==29AA,V,VGGS=S=24.5VV
15
3
2 VGS= 0
10
7
5
3
2
1.0
7
5
3
2
IF - VSD
0.1
10
7
5
5
3
2
0
-50
10000
7
5
-25
0
25
50
75
100 125 150
Ambient Temperature, Ta – ˚C
Ciss, Coss, Crss - VDS
f = 1MHz
3
2
Ciss
0.010.2
0.3 0.4
0.5 0.6
0.7 0.8
0.9 1.0
Diode Forward Voltage, VSD – V
VGS - Qg
10
9
8
7
6
1000
5
7
4
5
Coss
Crss
3
3
2
2
1
100
02
4
6
8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS – V
1000
7
VDD =10V
VGS=4V
5
3
2
SW Time - ID
td(off)
tf
100
7
tr
5
3
td(on)
2
10
7 0.1
2 3 5 7 1.0
2 3 5 7 10
2
Drain Current, ID – A
P D - Ta
2.4
00
10
20
30
40
50
60
Total Gate Charge, Qg – nC
ASO
100
7
IDP = 5 2 A
5
3
2
10
ID=9A
7
5
3
2
1.0
7
Operation in this area
5
is limited by RDS(on).
3
10µs
1ms
10ms
100ms
DC operation
2
0.1
7
5
Ta=25°C
3
2
Single pulse
1 unit
Mounted on a
ceramic
board
(1000mm2×0.8mm)
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS – V
2.0
1.7
1.6
1.2
1
Total
unit
Dissipation
0.8
0.4
0
Mounted
0
20
on
a ceramic
40
60
board (1000mm2×0.8mm)
80 100 120 140
160
Ambient Temperature, Ta – ˚C
No.6071-3/4