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2SA1037 데이터 시트보기 (PDF) - Rectron Semiconductor

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2SA1037
Rectron
Rectron Semiconductor 
2SA1037 Datasheet PDF : 2 Pages
1 2
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2SA1037
FEATURES
* Power dissipation
PCM :
0.2
W (Tamb=25OC)
* Collector current
ICM :
-0.15
A
* Collector-base voltage
V(BR)CBO : -60
V
* Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= -50mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= -1mA, IB=0)
V(BR)CEO
Emitter-base breakdown voltage (IE= -50mA, IC=0)
V(BR)EBO
Collector cut-off current (VCB= -60V, IE=0)
ICBO
Emitter cut-off current (VEB= -6V, IC=0)
IEBO
DC current gain (VCE= -6V, IC= -1mA)
hFE
Collector-emitter saturation voltage (IC= -50mA, IB= -5mA)
Transistion frequency (VCE= -12V, IC= -2mA, f= 30MHz)
VCE(sat)
fT
CLASSIFICATION OF hFE
RANK
Q
Range
120-270
Marking
FQ
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN.
-60
-50
-6
-
-
120
-
120
TYP.
-
-
-
-
-
-
-
-
R
180-390
FR
MAX.
-
-
-
-0.1
-0.1
560
-0.5
-
UNITS
V
V
V
mA
mA
-
V
MHz
S
270-560
FS
2006-3

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