2SA1250 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SA1250

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=200V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-2A ; VCE=-1V

hFE-2

DC current gain

IC=-5A ; VCE=-1V

Product Specification

2SA1250

MIN TYP. MAX UNIT

-200

V

-7

V

-1.5

V

-2.0

V

-10 μA

-10 μA

40

200

20

2

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