2SA1898 데이터 시트보기 (PDF) - TY Semiconductor

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2SA1898

PNP Epitaxial Planar Silicon

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Gain bandwidth product

Common base output capacitance

Collector-to-emitter saturation voltage

Base-to-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Turn-on time

Storage time

Turn-off time

Symbol

Testconditons

IcBO VCB = -12V , IE = 0

IEBO VEB = -3V , IC = 0

hFE VCE = -2V , IC = -0.5A

fT VCE = -2V , IC = -0.3A

Cob VCB = -10V , f = 1MHz

VCE(sat) IC = -1.5A , IB =-75mA

VBE(sat) IC = -1.5A , IB =-75mA

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -1mA , RBE =

V(BR)EBO IE = -10ìA , IC = 0

ton

tstg

toff

hFE Classification

Marking

Rank

hFE

AN

R

S

100 200

140 280

IC

Product specification

2SA1898

Min Typ Max Unit

-1 nA

-1 nA

100

280

300

MHz

28

pF

-0.25 -0.5 mV

-0.95 -1.2 V

-15

V

-15

V

-5

V

30 60 ns

100 200 ns

120 220 ns

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4008-318-123

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