2SB1101 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1101 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; RBE= °°
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; lc= 0
VcE(sat)-l Collector-Emitter Saturation Voltage lc= -2A; IB= -4mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -4A; IB= -40mA
VsE(sat)-1 Base-Emitter Saturation Voltage
lc= -2A; IB= -4mA
VeE(sat)-2 Base-Emitter Saturation Voltage
lc= -4A; IB= -40mA
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
ICEO
Collector Cutoff Current
VGE= -50V; RBE= °°
hFE
DC Current Gain
lc= -2A; VCE= -3V
VECF
C-E Diode Forward Voltage
IF=4A
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= -2A, IB1= -\B2= -4mA
2SB1101
MIN TYP. MAX UNIT
-60
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100 M A
-10
UA
1000
20000
3.0
V
0.8
us
4.0
us
1.0
us
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