2SC1766 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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2SC1766

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• Small flat package.

• Low saturation voltage VCE(sat)=-0.5V

• High speed switching time

• PC=1.0 to 2.0W

2SC1766 (NPN)

z High saturation current capability

Maximum Ratings (Ta=25 unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

2

A

Peak Base Current

IBM

0.4

A

Collector Power dissipation

Storage Temperature

PC

1

W

Tstg

-55to +150

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

Transition frequency

fT

Collector output capacitance

Cob

unless otherwise specified)

Test conditions

VCB=50V,IE=0

VEB=5V,IC=0

VCE=2V,IC=500mA

IC=1A, IB=50mA

IC=1A, IB=50mA

VCE=2V,Ic=0.5A

f=100MHz

VCB=10V,IE=0,f=1MHz

Min Typ Max Unit

0.1 μA

0.1 μA

70

240

0.5 V

1.2 mV

120

MHz

40

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

P1766

Q

120-270

Q1766

Y

180-390

Y1766

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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