2SB1530 데이터 시트보기 (PDF) - Renesas Electronics

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2SB1530

Silicon PNP Triple Diffused

Renesas Electronics 

Maximum Collector Dissipation Curve

30

20

TC

10

1.5 W

Ta

0

50

100

150

Ambient temperature Ta (°C)

Case temperature TC (°C)

2SB1530

Area of Safe Operation

–10

–5

–2 IC(max)(Continuous)

(–15 V, –2 A)

–1.0

–0.5

–0.2

(–60 V, –0.4 A)

–0.1

–0.05

–2

(–150 V, –65 mA)

–5 –10 –20 –50 –100 –200

Collector to emitter voltage VCE (V)

Typical Output Characteristics

–1.0 TC = 25°C –8 –7

–0.8

–6

–5

–0.6

–4

–3

–0.4

–2

–0.2

–1 mA

IB = 0

0

–4 –8 –12 –16 –20

Collector to emitter voltage VCE (V)

–1000

–500

Typical Output Characteristics

VCE = –4 V

TC = –75°C

–200

25 –25

–100

–50

–20

–10

–5

–0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0

Base to emitter voltage VBE (V)

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