B1097 데이터 시트보기 (PDF) - New Jersey Semiconductor

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B1097

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VsE(sat) Base-Emitter Saturation Voltage

lc= -5A; IB= -0.5A

ICBO

Collector Cutoff Current

VCB= -60V; le= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

I0= -3A; VCE= -1V

hFE-2

DC Current Gain

lc= -5A; VCE= -1V

Classifications

M

L

K

40-80 60-120 100-200

2SB1097

MIN TYP. MAX UNIT

-0.5

V

-1.5

V

-10 M A

-10 M A

40

200

20

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