2SC2983 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SC2983

TO-251-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate Transistors

2SC2983 TRANSISTOR (NPN)

TO-251-3L

FEATURES

z High Transition Frequency

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

160

160

5

1.5

1

125

150

-55~+150

1. BASE

2. COLLECTOR

3. EMITTER

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO*

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE

Cob

fT

Test conditions

IC=1mA,IE=0

IC=10mA,IB=0

IE=1mA,IC=0

VCB=160V,IE=0

VEB=5V,IC=0

VCE=5V, IC=100mA

IC=500mA,IB=50mA

VCE=5V, IC=500mA

VCB=10V,IE=0, f=1MHz

VCE=10V,IC=100mA,

Min Typ Max Unit

160

V

160

V

5

V

1

μA

1

μA

70

240

1.5

V

1

V

25

pF

100

MHz

CLASSIFICATION OF hFE

RANK

RANGE

O

70-140

Y

120-240

www.cj-elec.com

1

D,Nov,2014

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