2N6752 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2N6752

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0

VcE(sat)-! Collector-Emitter Saturation Voltage lc= 5A; IB= 1A

VcE(sat)-2 Collector-Emitter Saturation Voltage IC=10A;IB=3A

VBE(sat) Base-Emitter Saturation Voltage

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

|c= 5A; IB= 1A

VCE= 850V; VBE= -1.5V

VCE= 850V; VBE= -1.5V; TC=100-C

VEB= 8V; lc= 0

hFE

DC Current Gain

lc= 5A ; VCE= 3V

fy

Current Gain-Bandwidth Product

lc=0.2A;VCE=10V

COB

Output Capacitance

Switching times-Resistive Load

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

IE=0; VCB= 10V; f= 0.1MHz

lc= 5A; IB1= -IB2= 1A; VCc= 250V;

VBE= -6V; tp= 20 u s

2N6752

MIN MAX UNIT

450

V

1.0

V

3.0

V

1.3

V

0.1

1.0

mA

2.0 mA

8

40

15

60 MHz

50 250 pF

0.1

li S

0.4 v- s

3.0 u s

0.4 u s

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