FDG330P 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDG330P

P-Channel 1.8V Specified PowerTrench® MOSFET

Fairchild Semiconductor 

December 2001

FDG330P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

Features

• –2 A, –12 V.

RDS(ON) = 110 mΩ @ VGS = –4.5 V

RDS(ON) = 150 mΩ @ VGS = –2.5 V

RDS(ON) = 215 mΩ @ VGS = –1.8 V

• Low gate charge

• High performance trench technology for extremely

low RDS(ON)

• Compact industry standard SC70-6 surface mount

package

S

D

D

Pin 1

SC70-6

G

D

D

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

Note 1b)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.30

FDG330P

7’’

1

6

2

5

3

4

Ratings

–12

±8

–2

–6

0.75

0.48

–55 to +150

260

Tape width

8mm

Units

V

V

A

W

°C

°C/W

Quantity

3000 units

2001 Fairchild Semiconductor Corporation

FDG330P Rev D (W)

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