HEXFREDTM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Surface Mount
Description
HEXFREDTM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
PD - 20506
HFA50HF20
Ultrafast, Soft Recovery Diode
CATHODE
VR = 200V
VF = 0.96V
Qrr = 390nC
ANODE
ANODE
di(rec)M/dt = 900A/µs
SMD -1
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 100°C
IFSM @ TC = 25°C
PD @ TC = 25°C
TJ
TSTG
Parameter
D.C. Reverse Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
200
100
600
125
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
RθJC
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
www.irf.com
Typ.
—
2.6
Max.
1.0
—
Units
°C/W
g
1
9/18/98