HSC276 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HSC276

Silicon Schottky Barrier Diode for Mixer

Hitachi -> Renesas Electronics 

HSC276

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Reverse voltage

VR

Average rectified current IO

Junction temperature

Tj

Storage temperature

Tstg

Value

Unit

3

V

30

mA

125

°C

-55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Reverse voltage

Reverse current

Forward current

Capacitance

ESD-Capability*1

Symbol Min Typ Max Unit

VR

3

—— V

IR

— — 50 µA

IF

35 — — mA

C

— — 0.85 pF

—

30 — — V

Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V

Test Condition

IR = 1 mA

VR = 0.5V

VF = 0.5V

VR = 0.5V, f = 1 MHz

C=200pF , Both forward and reverse direction

1 pulse.

2

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