BST51 데이터 시트보기 (PDF) - Philips Electronics

부품명

상세내역

제조사

BST51

NPN Darlington transistors

Philips Electronics 

Philips Semiconductors

NPN Darlington transistors

Product specification

BST50; BST51; BST52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCES

VEBO

IC

ICM

IB

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

BST50

BST51

BST52

collector-emitter voltage

BST50

BST51

BST52

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

VBE = 0

open collector

Tamb ≤ 25 °C; note 1

MIN.

MAX.

UNIT

−

60

V

−

80

V

−

90

V

−

45

V

−

60

V

−

80

V

−

5

V

−

0.5

A

−

1.5

A

−

100

mA

−

1.3

W

−65

+150

°C

−

150

°C

−65

+150

°C

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

1999 Apr 26

3

Share Link: