BCX19
BCX20
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
IC = 10 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Emitter current (peak value)
Base current (d.c.)
Base current (peak value)
Total power dissipation up to Tamb = 25 °C*
Storage temperature
Junction temperature
VCES
VCE0
VEB0
IC
ICM
–IEM
lB
IBM
Ptot
Tstg
Tj
BCX19
max. 50
BCX20
30 V
max.
max.
max.
max.
max.
max.
max.
max.
max.
45
25 V
5
5V
500
mA
1000
mA
1000
100
mA
200
mA
250
mW
–55 to +150 ° C
150
°C
THERMAL RESISTANCE
From junction to ambient
Rth j–a = 500
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 20 V
IE = 0; VCB = 20V; Tj = 150° C
Emitter cut–off current
IC = 0; VEB = 5 V
Base emitter voltage ·
IC = 500 mA; VCE = 1 V
Saturation voltage
IC = 500 mA; IB = 50 mA
D.C. current gain
IC = 100 mA; VCE = 1 V
IC = 300 mA; VCE = 1 V
IC = 500 mA; VCE = 1 V
Transition frequency at f = 35 MHz
IC = 10 mA; VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
ICB0 <
ICB0 <
IEB0 <
VBE <
VCEsat <
hFE
hFE >
hFE >
fT
typ.
Cc
typ.
100
nA
5
mA
10
mA
1,2
V
620
mV
100 to 600
70
40
200
MHz
5
pF
Continental Device India Limited
Data Sheet
Page 2 of 4