BDW40 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BDW40 Datasheet PDF : 2 Pages
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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW40
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 60V(Min)
• High DC Current Gain
: hFE=1000(Min)@lc=5A
• Low Collector Saturation Voltage
: VcE<sat)= 2.0V(Max.)@ lc= 5.0A
= 3.0V(Max.)@lc=10A
• Complement to Type BDW45
APPLICATIONS
ig • Designed for general purpose and low speed switch ir
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25T)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
Is
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
85
W
150
'C
-55-150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance.Junction to Case
MAX UNIT
1.47 'CM/
i <•> '
?2
H<_jr
™
i) a
123
—nVV—-i—/yV 4 1
PIN 1.BASE
1.RC1OLLE^ CTOR
3.aHITTER
TO-220C package
:?qu "•
F ~*
|j--e/E
| "f
A
~TSOft-
I i W »v
* H'
soi''
K P"
I
,
: H G L*-
C
j
y-
mm
HIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
,l 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
Rs
2.50 2.70
1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. Hovvever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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