BDX14 데이터 시트보기 (PDF) - New Jersey Semiconductor

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BDX14

Silicon PNPPower Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -100mA; IB= 0

VcER(SUS) Collector-Emitter Sustaining Voltage lc=-100mA;RBE=100Q

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-1mA;lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -0.5A; IB= -50mA

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

hFE

DC Current Gain

lc= -0.5A; VCE= -4V

VCE= -90V; VBE= 1.5V

VCE= -30V; VBE= 1 .5V,TC=150'C

IG= -0.5A; VCE= -4V

fr

Current Gain-Bandwidth Product

lc=-0.2A;VCE=-10V

BDX14

WIN MAX UNIT

-55

V

-60

V

-7

V

-1.0

V

-1.7

V

-1.0

-5.0

mA

25

100

4

MHz

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