BDX84 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BDX84 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
BDX84/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX84
-45
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDX84A .
BDX84B
-60
V
-80
BDX84C
-100
VcE(sat) Collector-Emitter Saturation Voltage lc=-5A;lB=-10mA
VeE(on)-1 Base-Emitter On Voltage
lc= -5A; VCE= -3V
VsE(on)-2
ICEV
Base-Emitter On Voltage
BDX84
Collector
Cutoff Current
BDX84A
BDX84B
BDX84C
BDX84
lc=-10A;VCE=-3V
VCE= -45V; VBE= 1.5V
VCE= -45V; VBE= 1.5V; Tc= 150'C
VCE= -60V; VBE= 1.5V
VCE= -60V; VBE= 1 .5V; Tc= 1 50-C
VCE= -80V; VBE= 1.5V
VC6= -80V; VBE= 1.5V; Tc= 150'C
VCE=-100V; VaE=1.5V
VCE= -100V; VBE= 1.5V; Tc= 150'C
VCE= -20V; IB= 0
-2.0 V
-2.8 V
-4.5 V
-0.5
-3.0
-0.5
-3.0
mA
-0.5
-3.0
-0.5
-3.0
Collector
ICEO
Cutoff Current
BDX84A VCE= -30V; la= 0
BDX84B VCE= -40V; IB= 0
-1.0 mA
BDX84C VCE= -50V; IB= 0
IEBO
hpE-1
hpE-2
Emitter Cutoff Current
DC Current Gain
DC Current Gain
VEB= -5V; lc= 0
|C=_1A;VCE=-3V
lc= -5A; VCE= -3V
750
1000
-5.0 mA
hFE-3
DC Current Gain
lc=-10A; VCE=-3V
250
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