3SK300 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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3SK300

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Hitachi -> Renesas Electronics 

3SK300

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate 1 to source voltage

Gate 2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VG1S

VG2S

ID

Pch

Tch

Tstg

Ratings

Unit

14

V

±8

V

±8

V

25

mA

150

mW

150

°C

–55 to +150

°C

2

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