BD439 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BD439 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.2A
VBE(on)-i Base-Emitter On Voltage
lc=10mA;VcE=5V
VeE(on)-2 Base-Emitter On Voltage
lc=2A;VCE=1V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICEO
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc=10mA;VcE=5V
hpE-2
DC Current Gain
IC=0.5A; VCE= 1V
hFE-3
DC Current Gain
IC=2A;VCE=1V
fT
Current-Gain—Bandwidth Product lc=0.25A;VcE=1V
BD439
MIN TYP. MAX UNIT
60
V
0.8
V
0.58
V
1.5
V
100 n A
100 u A
1
mA
20
40
25
3
MHz
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