BSR58 데이터 시트보기 (PDF) - NXP Semiconductors.
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BSR58 Datasheet PDF : 10 Pages
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NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
7. Characteristics
Table 7. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
IGSS
IDSX
V(BR)GSS
VGSoff
ID
gate-source cut-off
current
drain cut-off current
gate-source breakdown
voltage
gate-source cut-off
voltage
VDS = 0 V;
VGS = 20 V
VDS = 15 V;
VGS = 10 V
IG = 1 A;
VDS = 0 V
VDS = 15 V;
ID = 0.5 nA
drain current
VDS = 15 V; VGS = 0 V
Crs
feedback capacitance VDS = 0 V; VGS = 10 V;
f = 1 MHz
RDSon
drain-source on-state
resistance
VGS = 0 V; ID = 0 A;
f = 1 kHz
VDSon
drain-source on-state
voltage
VGS = 0 V; ID = 20 mA
VGS = 0 V; ID = 10 mA
VGS = 0 V; ID = 5 mA
Switching times (VDD = 10 V; VGS = 0 V)
td
delay time
ID = 20 mA; VGSM = 10 V
ID = 10 mA; VGSM = 6 V
ID = 5 mA; VGSM = 4 V
tr
rise time
ID = 20 mA; VGSM = 10 V
ID = 10 mA; VGSM = 6 V
ID = 5 mA; VGSM = 4 V
toff
turn-off time
ID = 20 mA; VGSM = 10 V
ID = 10 mA; VGSM = 6 V
ID = 5 mA; VGSM = 4 V
BSR56
Min Max
-
1.0
BSR57
Min Max
-
1.0
BSR58 Unit
Min Max
-
1.0 nA
-
1.0
-
1.0
-
1.0 nA
- >40 - >40 - >40 V
>4
-
<10 -
- >50
-
-
-
<5
>2
- >0.8 - V
<6
-
<4
-V
- >20 -
>8 mA
- <100 - <80 mA
-
<5
-
<5 pF
- <25 - <40 - <60
- <750 -
-
-
- mV
-
-
- <500 -
- mV
-
-
-
-
- <400 mV
-
<6
-
-
-
- ns
-
-
-
<6
-
- ns
-
-
-
-
- <10 ns
-
<3
-
-
-
- ns
-
-
-
<4
-
- ns
-
-
-
-
- <10 ns
- <25 -
-
-
- ns
-
-
- <50 -
- ns
-
-
-
-
- <100 ns
BSR56_57_58
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 25 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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