APT10M11JVRU2 데이터 시트보기 (PDF) - Microsemi Corporation
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APT10M11JVRU2 Datasheet PDF : 7 Pages
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APT10M11JVRU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 100V Tj = 25°C
VGS = 0V,VDS = 80V Tj = 125°C
VGS = 10V, ID = 71A
VGS = VDS, ID = 2.5mA
2
VGS = ±20 V, VDS = 0V
250 µA
1000
11 mΩ
4V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 50V
ID = 50A @ TJ=25°C
VGS = 15V
VBus = 50V
ID = 142A @ TJ=25°C
RG = 0.6Ω
Min Typ Max Unit
8600
3200
pF
1180
300
95
nC
110
16
48
ns
51
9
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VF Diode Forward Voltage
IF = 30A
IF = 60A
IF = 30A
Tj = 125°C
IRM Maximum Reverse Leakage Current
VR = 200V
VR = 200V
Tj = 25°C
Tj = 125°C
CT Junction Capacitance
VR = 200V
Reverse Recovery Time
trr
Reverse Recovery Time
IF=1A,VR=30V
di/dt =200A/µs
Tj = 25°C
Tj = 25°C
Tj = 125°C
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 133V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Qrr Reverse Recovery Charge
Tj = 25°C
Tj = 125°C
1.1 1.15
1.4
V
0.9
250
500
µA
94
pF
21
24
ns
48
3
A
6
33
nC
150
trr Reverse Recovery Time
IF = 30A
31
ns
Qrr Reverse Recovery Charge
VR = 133V
Tj = 125°C
335
nC
IRRM Maximum Reverse Recovery Current di/dt =1000A/µs
19
A
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