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BSP316 데이터 시트보기 (PDF) - Siemens AG
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BSP316
SIPMOS ® Small-Signal Transistor
Siemens AG
BSP316 Datasheet PDF : 9 Pages
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9
BSP 316
Power dissipation
P
tot
=
ƒ
(
T
A
)
2.0
W
P
tot
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
T
A
Safe operating area
I
D
=f(
V
DS
)
parameter :
D
= 0,
T
C
=25°C
Drain current
I
D
=
ƒ
(
T
A
)
parameter:
V
GS
≥
-10 V
-0.70
A
-0.60
I
D
-0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0
20 40 60 80 100 120 °C 160
T
A
Transient thermal impedance
Z
th JA
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
10
2
K/W
Z
thJC
10
1
10
0
Semiconductor Group
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
5
Sep-12-1996
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