CPH3356 데이터 시트보기 (PDF) - ON Semiconductor
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CPH3356 Datasheet PDF : 5 Pages
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CPH3356
Power MOSFET
–20V, 137mΩ, –2.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and
low on resistance. This devices is suitable for applications with low gate
charge driving or low on resistance requirements.
Features
• Low On-Resistance
• 1.8V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• Load Switch
• Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−20
V
Gate to Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
−2.5
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−10
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm2 × 0.8mm)
1
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
125 °C/W
www.onsemi.com
VDSS
−20V
RDS(on) Max
137mΩ@ −4.5V
203mΩ@ −2.5V
323mΩ@ −1.8V
ID Max
−2.5A
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL
MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
April 2015 - Rev. 2
Publication Order Number :
CPH3356/D
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