ECH8657 데이터 시트보기 (PDF) - ON Semiconductor
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ECH8657 Datasheet PDF : 7 Pages
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Ordering number : ENA1710B
ECH8657
N-Channel Power MOSFET
35V, 4.5A, 59mΩ, Dual ECH8
http://onsemi.com
Features
• 4V drive
• Halogen free compliance
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
Unit
35
V
±20
V
4.5
A
30
A
1.3
W
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
ECH8657-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TC
TL
Lot No.
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/D2210 TKIM/42810PE TKIM TC-00002338 No. A1710-1/7
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