Nexperia
10
VBEsat
(V)
1
(1)
(2)
(3)
006aaa135
BCW66 series
45 V, 800 mA NPN general-purpose transistor
10
VBEsat
(V)
006aaa136
1
(1)
(2)
(3)
10- 1
10- 1
1
10
102
103
IC (mA)
10- 1
10- 1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 7. BCW66G: Base-emitter saturation voltage as a
function of collector current; typical values
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Figure 8. BCW66H: Base-emitter saturation voltage as a
function of collector current; typical values
1
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1
006aaa138
VCEsat
(V)
VCEsat
(V)
10- 1
10- 1
10- 2
(1)
(2)
(3)
(1) (2)
(3)
10- 2
10- 1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 9. BCW66F: Collector-emitter saturation voltage
as a function of collector current; typical values
10- 3
10- 1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Figure 10. BCW66G: Collector-emitter saturation voltage
as a function of collector current; typical values
BCW66x_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2017
© Nexperia B.V. 2017. All rights reserved.
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