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FCX690B(1999) 데이터 시트보기 (PDF) - Diodes Incorporated.
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FCX690B
(Rev.:1999)
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
Diodes Incorporated.
FCX690B Datasheet PDF : 3 Pages
1
2
3
FCX690B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL Min Typ Max
Collector-Base
Breakdown Voltage
V
(BR)CBO
45
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
45
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
Collector Cut-Off Current I
CBO
0.1
Emitter Cut-Off Current I
EBO
0.1
Collector-Emitter
V
CE(sat)
80
Saturation Voltage
300
Base-Emitter
V
BE(sat)
0.9
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
0.85
Static Forward Current h
FE
500
Transfer
400
Ratio
150
Transition Frequency
f
T
150
UNIT
V
V
V
A
A
mV
mV
V
V
MHz
Input Capacitance
C
ibo
200
pF
Output Capacitance
C
obo
16
pF
Switching Times
t
on
t
off
33
ns
1300
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
CONDITIONS.
I
C
=100
A
I
C
=10mA*
I
E
=100
A
V
CB
=35V
V
EB
=4V
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=5mA *
I
C
=1A, I
B
=10mA *
I
C
=1A, V
CE
=2V *
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
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