MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Erec
tb/ta
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Thermal resistance
VRM = 4500V, Tj = 125°C
IFM = 3400A, Tj = 125°C
IFM = 1500A, di/dt = 1000A/µs, VR = 2250V,
Tj = 125°C
With clamp circuit (Refer to Fig. 1 and Fig. 2)
Junction to fin
Limits
Unit
Min.
Typ.
Max.
—
—
150 mA
—
—
3.5
V
—
—
3600 µC
—
8.0
—
J/P
—
2
—
—
—
—
0.11 °C/W
Fig. 1 (Definition of reverse recovery waveform)
QRR = (trr × IRM)/2
IFM
0
50%IFM
di/dt(0~50%IFM)
trr
ta
tb
IRM
50%IRM
90%IRM
Fig. 2 (Reverse recovery test circuit)
L(load)
Di
Cc
CDi
Lc
GCT
CDi
Cc
Rc Di : FD1500BV-90DA
Cc : 6µF
Rc = 2Ω
Lc = 0.3µH
Rc
Feb.1999