FPBL20SL60 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FPBL20SL60

Smart Power Module (SPM)

Fairchild Semiconductor 

Absolute Maximum Ratings

Thermal Resistance

Item

Junction to Case Thermal

Resistance

Contact Thermal

Resistance

Symbol

Rth(j-c)Q

Rth(j-c)F

Rth(c-f)

Condition

Each IGBT under Inverter Operating Condition

(Note 2)

Each FWDi under Inverter Operating Condition

(Note 2)

Ceramic Substrate (per 1 Module)

Thermal Grease Applied

Note

2. For the measurement point of case temperature (Tc), please refer to Fig. 4.

Min. Typ. Max. Unit

- - 2.49 °C/W

- - 3.4 °C/W

- - 0.06 °C/W

Electrical Characteristics

Inverter Part (Tj = 25°C, Unless Otherwise Specified)

Item

Collector - Emitter

Saturation Voltage

FWDi Forward Voltage

Switching Times

Collector - Emitter

Leakage Current

Symbol

VCE(SAT)

VFM

tON

tC(ON)

tOFF

tC(OFF)

trr

ICES

Condition

VCC = VBS = 15V

VIN = 0V

IC = 20A, Tj = 25°C

IC = 20A, Tj = 125°C

VIN = 5V

IC = 20A, Tj = 25°C

IC = 20A, Tj = 125°C

VPN = 300V, VCC = VBS = 15V

IC = 20A, Tj = 25°C

VIN = 5V ↔ 0V, Inductive Load

(High-Low Side)

(Note 3)

VCE = VCES, Tj = 25°C

Min.

-

-

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

0.39

0.15

1.1

0.65

0.1

-

Max. Unit

2.3 V

2.4 V

2.5 V

2.3 V

-

µs

-

µs

-

µs

-

µs

-

µs

250 µA

Note

3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition

internally. For the detailed information, please see Fig. 5.

©2002 Fairchild Semiconductor Corporation

Rev. B1, February 2002

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